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 PRELIMINARY
CGH27060F
60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
Cree's CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for 2.3-2.9GHz WiMAX and BWA amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Package Type : 440193 PN: CGH2706 0F
Typical Performance Over 2.3-2.6GHz
Parameter Small Signal Gain EVM @ 39 dBm Drain Efficiency @ 39 dBm Input Return Loss 2.3 GHz 13.5 2.1 24.2 9.8
(TC = 25C)
of Demonstration Amplifier
2.5 GHz 13.0 1.9 22.5 7.7 2.6 GHz 12.9 2.2 22.3 5.9 Units dB % % dB
2.4 GHz 13.3 1.9 23.8 16.0
Note: Measured in the CGH27060F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
* * * *
2007 Rev .0 - May
2.3 - 2.9 GHz Operation >13 dB Small Signal Gain 2.0 % EVM at 8 W POUT 23 % Efficiency at 8 W POUT 2.7C/W Typical thermal resistance under 8.0 W PAVE OFDM WiMAX Fixed Access 802.16-2004 OFDM WiMAX Mobile Access 802.16e OFDMA
* * *
Subject to change without notice. www.cree.com/wireless
Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature
Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Soldering Temperature Thermal Resistance, Junction to Case 1
Symbol VDSS VGS TSTG TJ TS RJC
Rating 84 -10, +2 -55, +150 175 245 2.7
Units Volts Volts C C C C/W
Note: 1 Measured for the CGH27060F at 8 W PDISS
Electrical Characteristics (TC = 25C)
Characteristics DC Characteristics
4
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current Drain-Source Breakdown Voltage Case Operating Temperature Screw Torque
VGS(th) VGS(Q) IDS VBR TC T
-3.6 - 9.6 84 -10 -
-2.5 -2.6 10.4 100 -
- - - +105 80
VDC VDC A VDC C in-oz
VDS = 10 V, ID = 14.4 mA VDS = 28 V, ID = 240 mA VDS = 6.0 V, VGS = 2 V VGS = -8 V, ID = 14.4 mA Under 8 W PAVE Reference 440193 Package Revision 1
RF Characteristics2,3 (TC = 25C, F0 = 2.5 GHz unless otherwise noted) Small Signal Gain Drain Efficiency1 Back-Off Error Vector Magnitude Error Vector Magnitude Output Mismatch Stress Dynamic Characteristics Input Capacitance Output Capacitance Feedback Capacitance CGS CDS CGD - - - 19.3 4.6 1.7 - - - pF pF pF VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz GSS
- - - - -
13.0 22.5 2.5 2.0 TBD
- - - - -
dB % %
VDD = 28 V, IDQ = 240 mA VDD = 28 V, IDQ = 240 mA, PAVE = 8 W VDD = 28 V, IDQ = 240 mA, PAVE = 24 dBm VDD = 28 V, IDQ = 240 mA, PAVE = 8 W
EVM1 EVM2 VSWR
Y
No damage at all phase angles, VDD = 28 V, IDQ = 240 mA
Notes:
1 2
Drain Efficiency = POUT / PDC Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Measured in the CGH27060F-TB test fixture. Measured on wafer prior to packaging.
Coding Type RS-CC, Coding Rate Type 2/3.
3 4
Copyright (c) 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
2
CGH27060F Rev .0 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
Typical WiMAX Performance
Typical EVM at 24 dBm and 39 dBm vs Frequency of CGH27060F in Broadband Amplifier Circuit CGH27060F-TB
4.0 3.5 EVM(+24dBm) EVM(+39dBm)
Error Vector Magnitude (%)
3.0 2.5 2.0 1.5 1.0 0.5 0.0 2.3 2.4 2.5 2.6 2.7
Note: Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Frequency (GHz)
Gain and Return Loss vs Frequency of CGH27060F in Broadband Amplifier Circuit CGH27060F-TB, VDD = 28 V, IDQ = 240 mA
15 13 11 9
Gain (dB)
Typical Gain & Return Loss (Fixture 5)
6 3
7 5 3 1 -1 -3 -5 2 2.2 2.4 2.6 Frequency (GHz) 2.8 3
DB(|S(2,1)|) (L) Fix5_dev1246_4_Idsq228_S21 DB(|S(1,1)|) (R) Fix5_dev1246_4_Idsq228_S21 DB(|S(1,1)|) (R) Fix5_dev1246_4_Idsq228_S12 DB(|S(2,1)|) (R) Fix5_dev1246_4_Idsq228_S12
-6 -9 -12 -15
2.50 GHz -22.7 dB
-18 -21 -24
Copyright (c) 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
3
CGH27060F Rev .0 Preliminary
S12, S11, S22 (dB)
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
2.50 GHz 12.9 dB
0 -3
Typical WiMAX Performance
EVM vs POUT at 2.5 GHz of CGH27060F in Broadband Amplifier Circuit CGH27060F-TB
4.0 3.5 40% 35% EVM(2.5) Effic(2.5) 30% 25% 20% 15% 10% 5% 0% 20 22 24 26 28 30 32 34 36 38 40 42
Error Vector Magnitude (%)
3.0 2.5 2.0 1.5 1.0 0.5 0.0
WiMAX Average POUT
Note: Under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Drain Efficiency
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
Copyright (c) 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
4
CGH27060F Rev .0 Preliminary
CGH27060F-TB Demonstration Amplifier Circuit Schematic
GATE DRAIN (+28 V)
GND
J1
9
8
7
6
5
4
3
2
1
C30
C31
C16 C8 C7 C6 C5 C4 C11 C12 C13 C14 C15
C2
L1
R1 C1
FLANGED PACKAGE
J2 RF Input
R2
Q1
C10
J3 RF Output
C21 C17 C18 C19 C20 C22
CGH27060F-TB Demonstration Amplifier Circuit Outline
CGH27060F - TB 2.3- 2.5 GHZ
3-000543
Copyright (c) 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
5
CGH27060F Rev .0 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
CGH27060F-TB Demonstration Amplifier Circuit Bill of Materials
Designator R1 R2 C6,C13,C19 C16,C22 C15,C21 C8 C10 C1 C2 C4,C11,C17 C5,C12,C18,C30,C31 C7,C14,C20 L1 J2,J3 J1 Q1
Description RES, 1/16W, 0603, 1%, 22 OHMS RES, 1/16W, 0603, 1%, 100 OHMS CAP, 470PF, 10%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 8.2pF, +/-5%, 100B CAP, 0.9pF, +/-0.05pF, 0603 CAP, 2.2pF, +/-0.1pF, 0603 CAP, 10.0pF,+/-5%, 0603 CAP, 82pF, +/-5%, 0603 CAP,33000PF, 0805,100V, X7R It is a trace on the PCB and does not require a component. CONN SMA STR PANEL JACK RECP HEADER RT>PLZ .1CEN LK 9POS CGH27060F
Qty 1 1 3 1 1 1 1 1 1 3 5 3 1 1 1 1
CGH27060F-TB Demonstration Amplifier Circuit
Copyright (c) 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
6
CGH27060F Rev .0 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
Source and Load Impedances
D Z Source G Z Load
S
Frequency (MHz) 2300 2400 2500 2600 2700
1
Z Source 3.3 - j7.0 4.0 - j7.0 4.1 - j7.5 3.6 - j7.7 2.9 - j7.3
Z Load 11.2 - j7.8 9.9 - j8.0 8.4 - j8.1 7.3 - j7.8 6.1 - j7.3
Note : VDD = 28V, IDQ = 240mA. In the 440193 package. Note2: Impedances are extracted from the CGH27060F-TB demonstration circuit and are not source and load pull data derived from the transistor.
Product Dimensions CGH27060F (Package Type -- 440193)
PRELIMINARY
Copyright (c) 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
7
CGH27060F Rev .0 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. "Typical" parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer's technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, NC 27703 www.cree.com/wireless Ryan Baker Marketing Cree, Wireless Devices 919.287.7816 Tom Dekker Sales Director Cree, Wireless Devices 919.313.5639
Copyright (c) 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.
8
CGH27060F Rev .0 Preliminary
Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com/wireless


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